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MMBT5551LT1G
MMBT5551LT1G
Brand:ONSEMI
Package:---
Category:Discrete Semiconductor Products
D/C:within 3 years
MOQ:
Datasheet:---
In-Stock:9210
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Product Attributes
Mfr
onsemi
Series
-
Transistor Type
NPN
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
225 mW
Frequency - Transition
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Product Description

The MMBT5551LT1G is an NPN bipolar junction transistor (BJT) produced by ON Semiconductor. Here is its detailed introduction:


Electrical Characteristics

  • Voltage Ratings
  • Collector-Emitter Voltage VCEO: The maximum collector-emitter breakdown voltage is 160V.
  • Collector-Base Voltage VCBO: The maximum collector-base voltage is 180V.
  • Emitter-Base Voltage VEBO: The maximum emitter-base voltage is 6V.
  • Current Ratings
  • Collector Current Ic: The maximum collector current is 600mA.
  • Collector Cut-off Current Icbo: The collector cut-off current is 100nA.
  • Power Dissipation: The power dissipation is 225mW.
  • DC Current Gain (hFE): The DC current gain ranges from 80 to 250. For example, at 10mA and 5V, the minimum hFE is 80.
  • Vce Saturation Voltage: The Vce saturation voltage is 200mV at 5mA and 50mA.
  • Operating Temperature Range: The operating temperature range is -55°C to +150°C.


Package Information

  • Package Type: It comes in a SOT-23 package, which is a surface mount package with 3 pins. It has a height of 1.11mm and a dimension of 2.90 x 1.30mm.


Features

  • High Voltage Resistance: With a high collector-emitter breakdown voltage of 160V, it is suitable for applications that require high voltage resistance.
  • Relatively High Current Capacity: The ability to handle a maximum collector current of 600mA makes it applicable in circuits that need to drive moderate loads.
  • Low Saturation Voltage: The low Vce saturation voltage helps to reduce power consumption when the transistor is in the on state.
  • Wide Temperature Range: The wide operating temperature range of -55°C to +150°C enables it to work stably in various harsh environments.
  • Small Size: The SOT-23 package is small in size, which is suitable for applications where space is limited on the circuit board, facilitating high-density circuit layout.


Applications

  • Amplifier Circuits: It can be used in low to medium frequency amplifier circuits, such as audio amplifiers and RF amplifiers, to amplify weak signals.
  • Switching Circuits: It is often used as a switch in digital circuits and power control circuits to control the on and off of the circuit.
  • Signal Processing: In signal processing circuits, it can be used to shape, filter and convert signals.
  • General-Purpose Applications: It is suitable for a variety of general-purpose electronic circuits, such as in consumer electronics, industrial control, automotive electronics and other fields.


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